Design and optimization of an SOI-based electro
A silicon-on-insulator (SOI) variable optical attenuator (VOA) based on the plasma dispersion effect is optimized and realized, and the effects of doping
A silicon-on-insulator (SOI) variable optical attenuator (VOA) based on the plasma dispersion effect is optimized and realized, and the effects of doping
we propose and experimentally demonstrate low power and broadband variable optical attenuators (VOAs) on the silicon photonics platform.
An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series structure is used to improve the device efficiency. Compared to the attenuator in the single p-i-n
A 30-µm length silicon rib-waveguide based on-chip optical attenuator is fabricated and experimentally demonstrated. For a wide range of wavelengths (1490-1590nm), the attenuator offers around 2.6 dB
Abstract We experimentally demonstrate silicon variable optical attenuators (VOAs) based on thermally tunable Mach–Zehnder interferometers (MZIs). Thermo-optic tuning is enabled
A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching
In this work, variable optical attenuators VOAs for TDFA-band wavelengths were designed and fabricated based on a silicon-on-insulator SOI platform. By embedding a short PIN junction length of
We experimentally demonstrate silicon variable optical attenuators (VOAs) based on thermally tunable Mach–Zehnder interferometers (MZIs). Thermo-optic tuning is enabled by a silicon
Abstract A 24-channel variable optical attenuator array with a compact size of 15 × 10 mm2 is demonstrated using silica-based waveguides with 2.0% refractive index difference.
We present a design for an on-chip MEMS-actuated Variable Optical Attenuator (VOA) based on Silicon Photonic MEMS technology. The VOA consists of 30 individual mechanically
References (21) Abstract In this paper, electro-absorption variable optical attenuators (VOAs) have been designed and fabricated on silicon-on-insulator material with a 3 μm thick top
We have designed and characterized a novel micromachined variable optical attenuator (VOA) with a silicon optical wedge (SOW). Micromachined VOAs are being studied for effective
Low-Power-Consumption and Broadband 16-Channel Variable Optical Attenuator Array Based on Polymer/Silica Hybrid Waveguide Shengyuan Zhang 1, Yuexin Yin 2,*, Zihao Wang 2, Yafan Li 2,
In this paper, electro-absorption variable optical attenuators (VOAs) have been designed and fabricated on silicon-on-insulator material with a 3 μm thick top
PDF | On Jan 1, 2022, Maoliang Wei and others published TDFA-BAND SILICON OPTICAL VARIABLE ATTENUATOR | Find, read and cite all the research you
We apply liquid crystal on silicon (LCOS) in 0.8-$mUm standard complementary metal-oxide semiconductor (CMOS) technology to demonstrate a low-cost, high-performance pixelized liquid
A silicon-on-insulator (SOI) variable optical attenuator (VOA) based on the plasma dispersion effect is optimized and realized, and the effects of doping concentration and distance
A 24-channel variable optical attenuator array with a compact size of 15 × 10 mm2 is demonstrated using silica-based waveguides with 2.0% refractive index difference.
According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper. A wire rib
variable optical attenuator (VOA) is an essential device in a photonic integrated circuit (PIC) for channel power equalizing in wavelength division multiplex technology. The VOA function can be achieved by
We have performed a comparative study and identified Si 3 N 4 as the most suitable material for silicon photonics platform based on lower insertion and propagation losses. Si 3 N 4 based ridge waveguide
An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series structure is used to improve the device efficiency.
attenuators (VO As) can tune the intensity of light. VOAs are essen tial components for many applications in optic communications, especially for signal
The core principle involves integrating high-quality optical components with CMOS devices, which enhances electronic circuit functionality, reduces photonic system costs, and enables high
According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper.
A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma
We propose and experimentally demonstrate low-power and broadband variable optical attenuators (VOAs) on the silicon photonics platform. The VOAs are based on a Mach–Zehnder interferometer
An ultra-compact variable optical attenuator based on slow light photonic crystal waveguide with thermo-optic effect is demonstrated. Along with power consumption of as low as 30.7 mW, a variable
Combining the Fabry-Perot cavity effect and plasma dispersion effect of silicon, the attenuator could achieve a maximum attenuation of more than 50 dB.
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