Semiconductor Laser Diode Materials
The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from the infrared (IR) to the ultraviolet (UV) spectra.
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The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from the infrared (IR) to the ultraviolet (UV) spectra.
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No real laser is truly ; all lasers can emit light over some range of frequencies, known as the of the laser transition.
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The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively.
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High power diode lasers are applied in many different areas, including surface modification, welding and cutting.
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Two OBIS laser models are available at 505nm, at multiple output power options: The LX model can be digitally modulated up to 150MHz, 500kHz analog. The highly-functional OBIS LS/LX Systems are ideal for scientific, laboratory, and spectroscopic applications. The OBIS Series laser source systems cover the wavelength spectrum from 375nm (Ultraviolet) to 980nm (near-Infrared), and are perfect for flow cytometry and fluorescence spectroscopy. Its design puts an emphasis on compactness, stability and reliability so as to be optimal for the system built-in. The LBX-505 laser The LBX-505 laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm.
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